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Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures
Maxim Moscotin1, Justinas Jorudas1, Pawel Prystawko2
1Terahertz Photonics Laboratory, Center for Physical Sciences and Technology (FTMC), LT-10257 Vilnius, Lithuania.
Sensors (Basel, Switzerland)
|May 13, 2026
Summary
We developed a novel terahertz (THz) detector using a modified EdgeFET (m-EdgeFET) on AlGaN/GaN HEMTs. This hybrid design offers enhanced responsivity and reduced gate leakage for efficient THz detection.
Area of Science:
- Terahertz (THz) technology
- Semiconductor device physics
- High-frequency electronics
Background:
- Terahertz (THz) radiation detection is crucial for various applications.
- Existing detectors often face limitations in sensitivity, speed, or operating conditions.
- Advanced transistor designs are needed to improve THz detection capabilities.
Purpose of the Study:
- To propose and investigate a novel antenna-coupled wire-channel field-effect transistor-modified EdgeFET (m-EdgeFET) for THz detection.
- To evaluate the performance of the m-EdgeFET on AlGaN/GaN high-electron-mobility transistor (HEMT) structures.
- To analyze the device's responsivity, gate leakage current, and operating regimes.
Main Methods:
- Fabrication of the proposed m-EdgeFET on AlGaN/GaN HEMT structures.
- Characterization of the device's response to 150 GHz and 300 GHz radiation at room temperature.
- Analysis of responsivity dependence on channel length and gate voltage.
- Investigation of device operation in source-drain (SD) and gate coupling (GG) regimes.
Main Results:
- The m-EdgeFET demonstrated distinct response characteristics under THz radiation.
- Peak responsivity reached 6.5 V/W at -3 V gate voltage, with significantly lower gate bias required compared to conventional EdgeFET.
- Gate leakage current was reduced by an order of magnitude (~1 nA) compared to similar FinFETs.
- The device operated effectively in both SD and GG coupling regimes.
Conclusions:
- The proposed m-EdgeFET design offers a promising solution for efficient and electrically controlled THz detection.
- The hybrid architecture combines advantages of FinFET and EdgeFET concepts for superior performance.
- The device exhibits high responsivity and low leakage current, suitable for fast THz sensing applications.
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