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Updated: Oct 3, 2025
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
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Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
Usman Isyaku Bature1,2, Illani Mohd Nawi1, Mohd Haris Md Khir1
1Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Bandar Seri Iskandar 32610, Perak, Malaysia.
Materials (Basel, Switzerland)
|February 15, 2022
Summary
This study simulates the switching mechanism in Zinc Oxide (ZnO) Resistive Random Access Memory (RRAM). High operating power increases heat energy, compromising device reliability, necessitating low-current RRAM development.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Resistive Random Access Memory (RRAM) relies on SET and RESET processes for conductive filament control.
- Thermodynamics dictates these processes occur at the lowest free energy state.
- High operating voltages in RRAM devices lead to degradation like cracks and bubbles.
Purpose of the Study:
- To develop a statistical simulation for the switching mechanism in ZnO-based RRAM.
- To model the dynamic SET and RESET resistance transition process considering ion migration and temperature.
- To analyze the impact of operating power on RRAM energy and reliability.
Main Methods:
- A statistical simulation model was developed for ZnO-based RRAM.
- Field-driven ion migration and temperature effects were incorporated into the model.
- COMSOL Multiphysics software was used to simulate heat transfer, electrostatics, and energy.
Main Results:
- Heat transport within the conducting filament generates significant heat energy due to carrier transport.
- Increased operating power directly correlates with increased heat energy generation.
- Reliability of high-power RRAM devices is compromised.
Conclusions:
- Developing RRAM devices with low operating currents is critical for enhanced reliability.
- Material and structural optimization are key to achieving low-current RRAM.
- Carrier heat analysis highlights the importance of thermal management in RRAM design.
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