Related Experiment Video
Updated: Oct 3, 2025
Applying X-ray Imaging Crystal Spectroscopy for Use as a High Temperature Plasma Diagnostic
Published on: August 25, 2016
On-Line Multi-Frequency Electrical Resistance Tomography (mfERT) Device for Crystalline Phase Imaging in
Prima Asmara Sejati1,2, Noritaka Saito3, Yosephus Ardean Kurnianto Prayitno1,4
1Department of Mechanical Engineering, Division of Fundamental Engineering, Graduate School of Engineering, Chiba University, Chiba 263-8522, Japan.
Abstract:
An on-line multi-frequency electrical resistance tomography (mfERT) device with a melt-resistive sensor and noise reduction hardware has been proposed for crystalline phase imaging in high-temperature molten oxide. The melt-resistive sensor consists of eight electrodes made of platinum-rhodium (Pt-20mass%Rh) alloy covered by non-conductive aluminum oxide (Al2O3) to prevent an electrical short. The noise reduction hardware has been designed by two approaches: (1) total harmonic distortion (THD) for the robust multiplexer, and (2) a current injection frequency pair: low fL and high fH, for thermal noise compensation. THD is determined by a percentage evaluation of k-th harmonic distortions of ZnO at f=0.1~10,000 Hz. The fL and fH are determined by the thermal noise behavior estimation at different temperatures. At f <100 Hz, the THD percentage is relatively high and fluctuates; otherwise, THD dramatically declines, nearly reaching zero. At the determined fL≥ 10,000 Hz and fH≈ 1,000,000 Hz, thermal noise is significantly compensated. The on-line mfERT was tested in the experiments of a non-conductive Al2O3 rod dipped into conductive molten zinc-borate (60ZnO-40B2O3) at 1000~1200 °C. As a result, the on-line mfERT is able to reconstruct the Al2O3 rod inclusion images in the high-temperature fields with low error, ςfL, T = 5.99%, at 1000 °C, and an average error ⟨ςfL⟩ = 9.2%.
