Multiscale Study of the Charge Transport Properties of Silicone Rubber Oligomers

Polymer dielectrics are widely used as insulation in electronic and electrical equipment. The charge transport process in polymer dielectrics under a high electric field, which is considered to result in electrical aging and even breakdown of equipment insulation, has attracted considerable attention. Based on a localized charge transfer model, the charge transport mechanism for typical silicone rubber (SR) insulating materials was studied by multiscale methods. A model of silicone rubber oligomers under standard conditions was generated by classical molecular dynamics. The frontier molecular orbitals and projected density of states for the SR oligomer were obtained via quantum chemistry methods. The electronic coupling, reorganization energy, and free energy difference for both electron and hole transfer processes between adjacent SR molecules in the molecular dynamics model were calculated. Both hole transfer and electron transfer in SR conform to an intermolecular hopping mechanism due to their high intramolecular reorganization energy and low intermolecular electronic coupling. The results of normal mode analysis for reorganization energy indicate that the high-temperature approximation holds for charge transport in SR around or above room temperature. The charge transfer trajectory and charge mobility in SR were simulated based on kinetic Monte Carlo simulations. The hole and electron mobilities at room temperature were calculated to be 7.24 × 10^-11 and 2.76 × 10^-9 cm²/Vs, respectively, which agrees with the experimental data. Both electron transport and hole transport in SR show thermal activation characteristics, with corresponding activation energies of 358 and 314 meV, respectively. This work suggests a physical model to describe the charge transport process in SR polymer dielectrics.