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Updated: Oct 3, 2025

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Radiation induced defects in graphite
D A Bradley1, Lam Siok Ee2, Siti Nurasiah Mat Nawi2
1Centre for Applied Physics and Radiation Technologies, Sunway University, 46150, Petaling Jaya, Malaysia; Department of Physics, University of Surrey, Guidlford, GU27XH, UK.
Abstract:
The Raman intensity ratio ID/IG for: (a) graphite-rich pencil rods irradiated using x-ray doses up to 20 Gy; (b) a restricted view of the ID/IG response for the same group of media, limited to x-ray doses of no more than 6 Gy; (c1 and c2) an extended group of graphite-rich media irradiated using 60Co gamma-rays; (d) a restricted view of the ID/IG response for a restricted group of the media shown in (c), with 60Co gamma-ray doses limited to no more than 20 Gy; (e) 2B graphite-rich pencil rods irradiated using 6 MeV electrons, and: (f) irradiation of a subset of the media by thermal (0.025 eV) neutrons. The fluctuation of ID/IG with dose for carbon-rich human hair of nominal diameter 60 μm is indicated by the dashed line in (c) and (d). The values in parentheses indicate the percentage carbon content and the surface area-to-volume ratio of samples. The data are a re-organisation of that included in the studies of Abdul Sani et al. (2020, Bradley et al. (2019, 2021), Mat Nawi et al. (2021a,b), and Lam et al. (2021) such as to illustrate three prime dependencies, viz. surface to volume ratio, carbon content, and linear energy transfer, LET. (g) and (h) are combination graphs as indicated in the key to each.
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