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Updated: Oct 3, 2025
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy
Hiroya Tanaka1, Shinya Ohno1, Kazushi Miki2,3
1Graduate School of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan.
Abstract:
Thermal oxidation of Si(113) in a monolayer regime was investigated using high-temperature scanning tunneling microscopy (STM). Dynamic processes during thermal oxidation were examined in three oxidation modes - oxidation, etching, and transition modes - in the third of which both oxidation and etching occur. A precise temperature-pressure growth mode diagram was obtained via careful measurements for Si(113), and the results were compared with those for Si(111) in the present work and Si(001) in the literature. Initial oxidation processes were identified based on high-resolution STM images.
