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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Updated: Oct 3, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

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Published on: November 28, 2017

Wafer-Scalable Single-Layer Amorphous Molybdenum Trioxide.

Md Hasibul Alam¹, Sayema Chowdhury¹, Anupam Roy¹

¹Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States.

|February 21, 2022

Summary

This summary is machine-generated.

Researchers developed a new method to create wafer-scale monolayer amorphous molybdenum trioxide (MoO3) from molybdenum disulfide (MoS2). This breakthrough enables the thinnest oxide-based resistive switching memory devices with excellent performance.

Keywords:

amorphous molybdenum oxide monolayer resistive switching memory wafer-scale

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Published on: June 13, 2018

Area of Science:

Materials Science
Nanotechnology
Solid State Physics

Background:

Molybdenum trioxide (MoO3) is a crucial transition metal oxide with diverse technological applications.
Two-dimensional (2D) materials offer enhanced properties, driving interest in 2D MoO3.
Achieving large-area, true 2D MoO3 remains a significant challenge.

Purpose of the Study:

To develop a facile method for producing wafer-scale monolayer amorphous MoO3.
To investigate the properties of the synthesized 2D MoO3.
To demonstrate the application of 2D MoO3 in ultrathin electronic devices.

Main Methods:

Utilized 2D molybdenum disulfide (MoS2) as a precursor material.
Employed UV-ozone oxidation at a low substrate temperature (120 °C).
Characterized the resulting monolayer MoO3 using AFM, spectroscopy, and STEM.

Main Results:

Successfully synthesized wafer-scale, homogeneous monolayer amorphous MoO3.
The material exhibited smooth, continuous, uniform, and stable characteristics.
Demonstrated the thinnest oxide-based nonvolatile resistive switching memory with low voltage operation and high ON/OFF ratio.

Conclusions:

The developed method provides a scalable route to high-quality monolayer amorphous MoO3.
This work advances the field of ultrathin flexible oxide materials and devices.
The findings pave the way for exploring other 2D transition metal oxides.