Related Experiment Video
Updated: Oct 2, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Surface electronic corrugation of a one-dimensional topological metal: Bi(114)
Stephan J Schmutzler1,2, Adrian Ruckhofer1, Wolfgang E Ernst1
1Institute of Experimental Physics, Graz University of Technology, 8010 Graz, Austria. ruckhofer@tugraz.at.
Abstract:
The surface of Bi(114) is a striking example where the reduced dimensionality gives rise to structural rearrangement and new states at the surface. Here, we present a study of the surface structure and electronic corrugation of this quasi one-dimensional topological metal based on helium atom scattering (HAS) measurements. In contrast to low-index metal surfaces, upon scattering from the stepped (114) truncation of Bi, a large proportion of the incident beam is scattered into higher order diffraction channels which in combination with the large surface unit cell makes an analysis challenging. The surface electronic corrugation of Bi(114) is determined, using measurements upon scattering normal to the steps, together with quantum mechanical scattering calculations. Therefore, minimisation routines that vary the shape of the corrugation are employed, in order to minimise the deviation between the calculations and experimental scans. Furthermore, we illustrate that quantum mechanical scattering calculations can be used to determine the orientation of the in- and outgoing beam with respect to the stepped surface structure.
More Related Videos
11:09Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
Published on: June 23, 2017
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Related Concept Videos
Metallic Solids
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...