Ultrahigh efficient spin orbit torque magnetization switching in fully sputtered topological insulator and
Tuo Fan1, Nguyen Huynh Duy Khang1,2, Soichiro Nakano1
1Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo, 152-8550, Japan.
Scientific Reports
|February 23, 2022
Summary
Ultrahigh efficient spin orbit torque (SOT) magnetization switching was achieved using sputtered Bismuth Antimony (BiSb) topological insulators. This breakthrough enables ultralow power SOT-MRAM and spintronic devices.
Area of Science:
- Spintronics
- Materials Science
- Condensed Matter Physics
Background:
- Spin orbit torque (SOT) is crucial for next-generation non-volatile magnetoresistive random-access memory (MRAM).
- High-performance spin current sources with large spin Hall angles and conductivity are needed for efficient SOT magnetization switching.
- Mass-producible fabrication techniques are essential for practical MRAM applications.
Purpose of the Study:
- To demonstrate ultrahigh efficient and robust SOT magnetization switching.
- To investigate the potential of sputtered BiSb topological insulators as spin current sources.
- To assess the feasibility of BiSb for ultralow power SOT-MRAM and spintronic devices.
Main Methods:
- Fabrication of BiSb topological insulator layers using magnetron sputtering.
- Integration of BiSb with perpendicularly magnetized Co/Pt multilayers.
- Characterization of SOT magnetization switching efficiency and material properties.
Main Results:
- Achieved ultrahigh efficient and robust SOT magnetization switching.
- Demonstrated a large spin Hall angle (θSH = 10.7) for sputtered BiSb.
- Obtained high electrical conductivity (σ = 1.5 × 105 Ω-1 m-1) for BiSb.
- Sputtered BiSb shows comparable performance to materials fabricated by molecular beam epitaxy.
Conclusions:
- Sputtered BiSb topological insulators are highly efficient spin current sources.
- BiSb is a promising material for ultralow power SOT-MRAM.
- This work validates the use of BiSb in advanced SOT-based spintronic devices.
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