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High-precision micro-displacement sensor based on tunnel magneto-resistance effect.
Xuhu Wang1,2,3, Wang Li1,2,3, Li Jin4,5,6
1School of Instrument and Electronics, North University of China, Taiyuan, 030051, Shanxi, China.
Scientific Reports
|February 23, 2022
Summary
This study presents a high-precision micro-displacement sensor utilizing the tunnel magneto-resistance (TMR) effect. The developed sensor achieves 800 nm resolution, enabling advanced applications in micro-measurement systems.
Area of Science:
- Physics
- Electrical Engineering
- Materials Science
Background:
- Tunnel magneto-resistance (TMR) sensors offer high sensitivity for precise measurements.
- Micro-displacement sensing is critical in various advanced technological applications.
- Low-temperature assembly techniques are essential for fabricating sensitive electronic devices.
Purpose of the Study:
- To develop and validate a high-precision micro-displacement sensor.
- To enhance the resolution and accuracy of TMR-based displacement sensors.
- To provide guidance for practical micro-displacement sensor design.
Main Methods:
- Designed and simulated magnetic characteristics of the TMR sensor.
- Implemented low-temperature assembly using chip-level Au-In bonding for TMR devices.
- Employed subdivision interpolation technique to linearize sensor output and enhance resolution.
- Utilized a multi-bridge circuit method to mitigate magnetic interference.
Main Results:
- Achieved a micro-displacement sensor resolution of 800 nm.
- Demonstrated an accuracy of 0.14[Formula: see text].
- Obtained a full-scale measurement range up to the millimeter level.
Conclusions:
- The developed TMR sensor offers high performance for micro-displacement measurement.
- The subdivision interpolation and multi-bridge circuit methods effectively improve sensor resolution and stability.
- This work serves as a significant guide for designing practical micro-displacement sensors.
