Tuning Electronic Structure and Piezoresistivity of Graphene by Monovacancy Defect Concentration: A First-Principles

Shengsheng Wei1,2,3, Shuaituan Wang1,2,4, Ningning Su1,2,3

  • 1Shanxi Key Laboratory of Graphene Sensing Materials and Devices, North University of China, Taiyuan 030051, China.

Summary

Monovacancy defects in graphene significantly enhance piezoresistive sensor performance by altering electronic structure and increasing the gauge factor. This defect engineering offers a pathway for developing advanced graphene-based sensors.

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