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X-ray Crystallography

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Optimized wavelength selection for diffraction-based overlay measurement by minimum asymmetry factor variation with

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|February 24, 2022

Summary

A new wafer-less method selects optimal wavelengths for overlay metrology. This approach minimizes overlay errors caused by asymmetric grating structures, achieving a maximum error of 0.21 nm.

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Area of Science:

Semiconductor manufacturing
Optical metrology
Nanofabrication

Background:

Overlay metrology is critical for semiconductor manufacturing accuracy.
Asymmetric grating structures in advanced lithography introduce overlay errors.
Existing wavelength selection methods may not fully address these errors.

Purpose of the Study:

To propose a robust and wafer-less wavelength selection methodology for overlay metrology.
To develop an overlay calculation model that accounts for asymmetric bottom grating structures.
To minimize overlay errors in semiconductor fabrication processes.

Main Methods:

Developed an overlay calculation model incorporating asymmetric bottom grating effects.
Introduced an asymmetry factor to quantify intensity ratios.
Simulated four test cases to validate the model.
Selected the optimal wavelength by minimizing the variation of the asymmetry factor.

Main Results:

The asymmetric bottom grating structure was identified as a source of additional diffracted intensities causing overlay error.
The asymmetry factor effectively described the intensity ratio related to grating structures.
The proposed methodology successfully selected an optimized wavelength.
The maximum overlay error at the optimized wavelength was determined to be 0.21 nm.

Conclusions:

The developed wavelength selection methodology is effective for reducing overlay errors.
The asymmetry factor provides a valuable metric for analyzing grating-induced errors.
This wafer-less approach offers a practical solution for optimizing overlay metrology in semiconductor manufacturing.