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Raman Spectroscopy: Overview01:20

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The underlying principle of Raman spectroscopy is based on the interaction between light and matter, specifically molecules' inelastic scattering of photons. When a monochromatic beam of light, typically from a laser source, interacts with a sample, most scattered light has the same frequency as the incident light. This is known as Rayleigh scattering.
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A conventional Raman spectrophotometer includes a laser source, a sample holding system, a wavelength selector, and a detector.
The monochromatic laser source, typically using visible or near-infrared radiation, generates a highly focused beam of light. This light interacts with the molecules of the sample, scattering some of the light. Liquid and gaseous samples are usually tested in ordinary glass capillaries, while solids can be analyzed as powders packed in capillaries or as potassium...
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Resonant Raman Scattering in Boron-Implanted GaN.

Yi Peng1, Wenwang Wei1, Muhammad Farooq Saleem1

  • 1Research Center for Optoelectronic Materials and Devices, School of Physical Science & Technology, Guangxi University, Nanning 530004, China.

Micromachines
|February 25, 2022
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Summary

Boron ion implantation significantly reduces Gallium Nitride (GaN) photoluminescence. This study details a method to calculate activation and transition energies in B-ion-implanted GaN, revealing distinct energy transitions.

Keywords:
B-implantationGaNRaman spectroscopyphotoluminescence

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Ion Implantation

Background:

  • Gallium Nitride (GaN) is a key semiconductor material.
  • Photoluminescence (PL) is crucial for GaN device performance.
  • Ion implantation can modify semiconductor properties.

Purpose of the Study:

  • To investigate the impact of Boron ion (B-ion) implantation on GaN.
  • To analyze the changes in photoluminescence (PL) and optical properties.
  • To develop a calculation method for activation and transition energies.

Main Methods:

  • Boron ion (B-ion) implantation into GaN epilayers.
  • High-temperature rapid thermal annealing (RTA).
  • Resonant Raman spectroscopy (RRS) and temperature-dependent Raman spectroscopy.

Main Results:

  • B-ion implantation and RTA significantly decreased the GaN PL signal.
  • Two distinct transitions with activation energies of 66 and 116 meV were identified in B-ion-implanted GaN.
  • Calculated transition energies ranged from 3.357 to 3.449 eV.

Conclusions:

  • B-ion implantation profoundly affects GaN luminescence.
  • The study presents a viable method for calculating activation and transition energies in ion-implanted GaN.
  • Understanding these transitions is vital for optimizing GaN-based optoelectronic devices.