Multiphysics Simulation of Crosstalk Effect in Resistive Random Access Memory with Different Metal Oxides

Area of Science:

• Materials Science
• Electrical Engineering
• Nanotechnology

Background:

• Resistive random-access memory (RRAM) is a promising non-volatile memory technology.
• Understanding thermal crosstalk is crucial for RRAM array design and performance.
• Graphene oxide and platinum are explored as electrode materials.

Purpose of the Study:

• To simulate and compare thermal crosstalk effects in RRAM devices with graphene and platinum electrodes.
• To investigate the impact of different metal oxides (TiO_x, NiO_x, HfO_x, ZrO_x) on thermal crosstalk in Pt-RRAM.
• To determine the minimum spacing between conduction filaments to prevent device failure.

Main Methods:

• Electrical conductivity modeling of graphene oxide.
• Finite element simulation of thermal crosstalk effects in RRAM arrays.
• Analysis of oxygen vacancy density and temperature distributions.
• Comparison of RRAM performance based on different metal oxides.

Main Results:

• Thermal crosstalk effects are significantly more severe at smaller spacings between adjacent conduction filaments.
• Close proximity of filaments can lead to altered logic states and device malfunction.
• The choice of metal oxide (TiO_x, NiO_x, HfO_x, ZrO_x) influences RRAM thermal characteristics.

Conclusions:

• Minimizing thermal crosstalk is essential for reliable RRAM operation.
• Device spacing and material selection are critical design parameters for RRAM arrays.
• Simulation results provide guidance for the compatibility design of Pt-RRAM devices.