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Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum
Shuo Zhang1,2, Zhicheng Guo1, Qi Shen2
1Zhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, P. R. China.
ACS Omega
|May 4, 2026
Summary
Halogenated borophene, specifically B4Cl4 and B4Br4, enhances double-gate (DG) MOSFET performance by improving subthreshold swing and ON-OFF ratio. Optimal underlap lengths further boost device efficiency for future electronics.
Area of Science:
- Semiconductor device physics
- Materials science
- Quantum transport phenomena
Background:
- Double-gate (DG) MOSFETs are crucial for high-performance computing.
- Scaling challenges necessitate novel channel materials beyond silicon.
- Borophene and its halogenated derivatives offer unique electronic properties.
Purpose of the Study:
- Investigate performance limits of ultrashort-channel DG MOSFETs using halogenated borophene.
- Analyze key device metrics including on-current, subthreshold swing, and power consumption.
- Optimize channel material and underlap length for enhanced transistor performance.
Main Methods:
- Density Functional Theory (DFT) combined with Non-Equilibrium Green's Function (NEGF) quantum transport simulations.
- Systematic analysis of n-type and p-type devices under varying gate and underlap lengths.
- Exploration of B4Cl4 and B4Br4 as channel materials for nMOSFET and pMOSFET, respectively.
Main Results:
- Halogenated borophene (B4Cl4, B4Br4) significantly improves subthreshold swing, ON-OFF ratio, and energy-delay product.
- Optimal underlap length configurations further enhance device performance across different gate lengths.
- Demonstrated superior performance compared to conventional materials for ultrascaled transistors.
Conclusions:
- Halogenated borophene is a promising channel material for next-generation ultrascaled transistors.
- Device design optimization through material selection and underlap engineering is critical for post-Moore era applications.
- Provides a theoretical basis for advanced 2D semiconductor device development.
