A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability

Area of Science:

• Materials Science
• Electrical Engineering
• Semiconductor Physics

Background:

• Gallium Nitride (GaN) power systems require robust electrostatic discharge (ESD) protection.
• Conventional ESD protection devices face challenges in achieving bidirectional capability and high robustness.

Purpose of the Study:

• To propose and characterize a novel AlGaN/GaN transient voltage suppression (TVS) diode with bidirectional clamp capability.
• To investigate the impact of key resistive components on the device's triggering voltage and ESD performance.

Main Methods:

• Design and fabrication of a monolithic AlGaN/GaN bidirectional switch incorporating specific current-limiting and amplification resistors.
• Experimental evaluation of the device's triggering voltage (Vtrig) and secondary breakdown current (Is) under various ESD conditions.
• Analysis of the influence of 2DEG-based resistors (R1A/R1C and R2) on Vtrig.

Main Results:

• The proposed bidirectional TVS diode (B-TVS-D) exhibits symmetrical triggering voltage and high secondary breakdown current (Is > 8 A).
• Achieved a 12 kV human body model failure voltage, demonstrating significant ESD robustness.
• Demonstrated that R2 and R1A/R1C values critically affect Vtrig, with decreased R2 and increased R1A/R1C lowering Vtrig.

Conclusions:

• The novel AlGaN/GaN B-TVS-D effectively enhances ESD robustness for GaN-based power systems.
• The device can be fabricated on a standard p-GaN HEMT platform, simplifying ESD design integration.
• This development offers a convenient solution for improving the reliability of GaN power electronics against transient overvoltages.