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Up to 300 K lasing with GeSn-On-Insulator microdisk resonators
Optics Express
|February 25, 2022
Summary
Germanium-tin (GeSn) alloys enable room-temperature lasing up to 300 K. This breakthrough in Group-IV materials is achieved using microdisk resonators with strain engineering and high tin content.
Area of Science:
- Semiconductor Physics
- Materials Science
- Optoelectronics
Background:
- Germanium-tin (GeSn) alloys are key Group-IV materials for optoelectronic applications.
- Achieving direct band gap properties in GeSn is crucial for laser integration.
- Current challenges include realizing efficient lasing at room temperature.
Purpose of the Study:
- To demonstrate room-temperature lasing in GeSn alloys.
- To enable CMOS-compatible laser integration using Group-IV materials.
- To explore the potential of GeSn-On-Insulator platforms for optoelectronics.
Main Methods:
- Fabrication of microdisk resonators on a GeSn-On-Insulator platform.
- Utilizing strain engineering techniques.
- Employing a thick layer of high tin (Sn) content GeSn.
Main Results:
- Successful room-temperature lasing achieved up to 300 K.
- Demonstrated the viability of GeSn for laser applications.
- Confirmed the effectiveness of strain engineering and high Sn content.
Conclusions:
- GeSn alloys are a promising material for CMOS-compatible lasers.
- Room-temperature lasing in GeSn is attainable with optimized fabrication.
- This work paves the way for integrated photonic devices on silicon platforms.
