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Photodetection Tuning with High Absorptivity Using Stacked 2D Heterostructure Films
Umar Farooq1, Kossi A A Min-Dianey2, Pandey Rajagopalan3
1Paul C. Lauterbur Research Center for Biomedical Imaging, Institute of Biomedical and Health Engineering, Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen 518055, China.
This study introduces novel silicon/graphite stacked photodetectors (PDs) for enhanced light absorption and broadband detection. These devices offer promising performance for next-generation optoelectronic applications.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Graphene-based photodetectors (PDs) are limited by graphene's low optical absorption, necessitating hybrid structures.
- Silicon (Si) films offer high absorption, carrier mobility, and CMOS integration, making them suitable for PDs.
Purpose of the Study:
- To develop a new generation of PD devices by integrating silicon and graphite films.
- To investigate the photo-detection properties of stacked Si/graphite heterostructures.
Main Methods:
- Fabrication of p-type Si film/graphite film/n-type Si-stacked PD devices using a splitting/printing transfer and pyrolysis method.
- Characterization of device performance, including responsivity, detectivity, noise-equivalent power, external quantum efficiency, and response time.
- Computational analysis to confirm enhanced light absorption.
Main Results:
- The fabricated PD devices demonstrated broadband detection from 0.4-4 μm (computationally).
- Experimental results showed a responsivity of 100 mA/W, specific detectivity of 3.44 × 10^6 Jones, and NEP of 14.53 × 10^-10 W/(Hz)^1/2.
- Achieved external quantum efficiency of 0.2 and fast response times (38 μs rise/1 μs fall) under 532 nm illumination.
Conclusions:
- The integrated Si/graphite stacked heterostructure PDs exhibit excellent optoelectronic properties.
- This innovative design overcomes graphene's low absorption, paving the way for advanced photodetector technologies compatible with Si.
- The findings support the potential of these devices for applications in optical communication and image sensing.
