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Related Experiment Video

Updated: Oct 2, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

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Published on: April 12, 2018

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

Chih-Yi Cheng¹, Wei-Liang Pai^1,2, Yi-Hsun Chen¹

¹Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan.

|February 28, 2022

Summary

Researchers discovered a strong self-gating effect in ionic liquid-functionalized Indium Selenide (InSe) transistors, significantly boosting interfacial capacitance. This finding is crucial for developing advanced 2D material hybrid devices.

Keywords:

InSe field-effect transistor intersystem Coulomb interaction ionic liquid long-range Coulomb scattering self-gating

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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

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Published on: June 3, 2015

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Understanding Coulomb interactions in 2D materials is key for hybrid devices.
Ionic liquids (ILs) are used for electrostatic gating of 2D materials.
Intrinsic interactions between 2D materials and ILs remain understudied.

Purpose of the Study:

Investigate intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors.
Quantify the self-gating effect and its impact on interfacial capacitance.
Analyze IL-phase-dependent transport characteristics.

Main Methods:

Displacement current measurements in IL-functionalized InSe transistors.
Characterization of channel current, carrier mobility, and density.
Raman spectroscopy to confirm Coulomb interaction correlations.

Main Results:

A significant self-gating effect was observed, enhancing interfacial capacitance by 50-fold (up to 550 nF/cm²).
Transport properties (current, mobility, density) showed IL-phase dependence, confirming self-gating.
Self-gating dominance in the rubber phase was linked to intra- and intersystem Coulomb interactions.

Conclusions:

The study reveals strong capacitive coupling at the InSe/IL interface due to self-gating.
Insights into Coulomb interactions are provided, advancing 2D material-IL hybrid device development.
This work paves the way for novel liquid/2D material hybrid device applications.