Related Experiment Video
Updated: Oct 1, 2025

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
Anomalous Thermoelectric Performance in Asymmetric Dirac Semimetal BaAgBi
Zizhen Zhou1, Kunling Peng2, Shijuan Xiao1
1Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China.
Lower band degeneracy in topological semimetal BaAgBi enhances thermoelectric performance. Asymmetric electronic structures boost the Seebeck coefficient and conductivity, leading to superior thermoelectric materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Chemistry
Background:
- Multiple-band degeneracy is typically linked to high thermoelectric performance.
- Understanding factors beyond degeneracy is crucial for optimizing thermoelectric materials.
Purpose of the Study:
- To investigate the thermoelectric properties of the topological semimetal BaAgBi.
- To elucidate the role of asymmetric electronic structures in its transport behavior.
- To explore strategies for enhancing thermoelectric performance in BaAgBi.
Main Methods:
- Experimental synthesis and characterization of BaAgBi.
- Transport measurements to determine Seebeck coefficient and electrical conductivity.
- Analysis of electronic band structure and relaxation time approximations.
Main Results:
- BaAgBi exhibits p-type Dirac bands with lower degeneracy, surprisingly yielding high Seebeck coefficient and electrical conductivity.
- Asymmetric electronic structures, including Dirac bands and parabolic conduction valleys, contribute to anomalous transport properties.
- An average figure of merit (ZT) of 0.42 was achieved, enhanced to 1.38 by breaking C3 symmetry.
Conclusions:
- Asymmetric electronic structures, not just band degeneracy, are key for high thermoelectric performance.
- BaAgBi serves as a model system for understanding abnormal transport in Dirac semimetals.
- Targeting asymmetric electronic features offers a new avenue for designing advanced thermoelectric materials.
More Related Videos
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors
Band Theory
The energy difference between these bands is known as the band gap.
Conductor, Semiconductor,...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...

