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Engineering Optically Active Defects in Hexagonal Boron Nitride Using Focused Ion Beam and Water.

Evgenii Glushkov1, Michal Macha1, Esther Räth2

  • 1Laboratory of Nanoscale Biology, Institute of Bioengineering, Ecole Polytechnique Federale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.

ACS Nano
|March 7, 2022
PubMed
Summary

Focused ion beam (FIB) engineering precisely positions optically active defects in hexagonal boron nitride (hBN). This breakthrough enables controlled defect creation and characterization for advanced nanophotonics and quantum sensing applications.

Keywords:
defect engineeringfocused ion beamhBNhexagonal boron nitrideoptically active defectsquantum emittersvdW materials

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Quantum Optics

Background:

  • Hexagonal boron nitride (hBN) is a promising material for nanophotonics and quantum sensing due to its optically active defects.
  • Precise spatial control of these emitters in hBN has been a significant challenge, hindering device integration and characterization.

Purpose of the Study:

  • To systematically investigate the physical processes of defect creation in hBN using focused ion beam (FIB) systems.
  • To understand the role of beam-substrate interactions in forming optically active defects.
  • To enable deterministic spatial and spectral control of emitters for advanced applications.

Main Methods:

  • Focused Ion Beam (FIB) irradiation of hBN.
  • Transmission Electron Microscopy (TEM) for structural analysis.
  • Super-resolution optical microscopy and Atomic Force Microscopy (AFM) for emitter localization.
  • Water exposure to induce structural and optical transitions.

Main Results:

  • FIB irradiation leads to local mechanical deterioration and amorphization of hBN layers.
  • Amorphized hBN exhibits a reversible structural and optical transition upon water exposure, creating distinct defect types.
  • Defected edges within FIB-induced sites are identified as the primary sources of fluorescent emission.
  • High spatial resolution localization of emitters within defect sites was achieved.

Conclusions:

  • FIB irradiation is a viable method for engineering optically active defects in hBN with controlled spatial positioning.
  • Understanding beam-substrate interactions and post-processing (e.g., water exposure) is crucial for tuning defect properties.
  • This work provides a foundation for fabricating hBN-based devices for integrated photonics, nanoscale sensing, and nanofluidics.