Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Non-ohmic Devices00:51

Non-ohmic Devices

1.2K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.2K
Photoluminescence: Applications01:14

Photoluminescence: Applications

516
Photoluminescence offers a wide range of applications due to its inherent sensitivity and selectivity. This technique allows for both direct and indirect analyses of the analyte. Direct quantitative analysis is possible when the analyte exhibits a favorable quantum yield for fluorescence or phosphorescence. However, an indirect analysis may be feasible if the analyte is not fluorescent or phosphorescent, or if the quantum yield is unfavorable. Indirect methods include reacting the analyte with...
516
Types of Semiconductors01:20

Types of Semiconductors

980
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
980

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Characterizing nanostructured films using phase sensitive vibrational sum frequency spectroscopy.

The Journal of chemical physics·2026
Same author

Inhomogeneous Charge Carrier Density in Wafer-Scale MoS<sub>2</sub> Caused by Locally Varying Substrate Doping.

ACS applied materials & interfaces·2026
Same author

Defect-engineered competition between exciton annihilation and trapping in MOCVD WS<sub>2</sub>.

Chemical science·2025
Same author

DFT-Assisted Approach to Low-Temperature Graphene Growth on Sapphire.

Small (Weinheim an der Bergstrasse, Germany)·2025
Same author

Author Correction: Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters.

Nature communications·2025
Same author

Europium(iii)/terbium(iii) mixed metal-organic frameworks and their application as ratiometric thermometers with tuneable sensitivity in organic dispersion.

RSC advances·2025

Related Experiment Video

Updated: Sep 30, 2025

Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.3K

Progress and Challenges of InGaN/GaN-Based Core-Shell Microrod LEDs.

Johanna Meier1, Gerd Bacher1

  • 1Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, Bismarckstraße 81, 47057 Duisburg, Germany.

Materials (Basel, Switzerland)
|March 10, 2022
PubMed
Summary

Three-dimensional microrod LEDs offer improved performance over planar devices by eliminating polarization fields. This review explores their processing, analysis, and application potential for advanced solid-state lighting.

Keywords:
GaNLEDcore–shellmicrorodnanowire

More Related Videos

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K
In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

9.4K

Related Experiment Videos

Last Updated: Sep 30, 2025

Development of Efficient OLEDs from Solution Deposition
07:09

Development of Efficient OLEDs from Solution Deposition

Published on: November 4, 2022

2.3K
Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode
10:41

Enhanced Electron Injection and Exciton Confinement for Pure Blue Quantum-Dot Light-Emitting Diodes by Introducing Partially Oxidized Aluminum Cathode

Published on: May 31, 2018

8.9K
In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

9.4K

Area of Science:

  • Solid-state lighting
  • Semiconductor device physics
  • Materials science

Background:

  • Planar indium gallium nitride/gallium nitride (InGaN/GaN) heterostructures are standard for solid-state lighting.
  • Wurtzite heterostructures exhibit polarization fields that hinder electron-hole overlap and affect emission energy.
  • Three-dimensional (3D) core-shell microrods present field-free sidewalls, enhancing radiative recombination and light-emitting area.

Purpose of the Study:

  • To review advancements in the processing and analysis of microrod LEDs.
  • To highlight the application perspectives of 3D microrod LED architecture.
  • To compare microrod LEDs with traditional planar devices.

Main Methods:

  • Review of existing literature on microrod LED fabrication.
  • Analysis of device performance metrics for microrod LEDs.
  • Discussion of application-specific advantages of 3D architectures.

Main Results:

  • Microrod LEDs demonstrate potential for higher radiative recombination rates.
  • 3D architecture increases light-emitting area efficiency per substrate.
  • Challenges in processing and integration currently limit widespread adoption.

Conclusions:

  • Microrod LEDs offer significant advantages over planar LEDs for solid-state lighting.
  • Further development in processing and device integration is needed for microrod LEDs to replace planar devices.
  • The 3D architecture holds promise for next-generation lighting applications.