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Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

Dong-Hyun Wang1, Ja-Yun Ku1, Dae-Han Jung1

  • 1School of Electronics Engineering, Chungbuk National University, Cheongju 28644, Korea.

Materials (Basel, Switzerland)
|March 10, 2022
PubMed

Keywords:
annealingforming gas annealinggate-enclosed MOSFEThigh pressure deuterium annealingpost metal annealing

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