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Updated: Sep 30, 2025

Scanning-probe Single-electron Capacitance Spectroscopy

Scanning-probe Single-electron Capacitance Spectroscopy

Published on: July 30, 2013

Boxcar Averaging Scanning Nonlinear Dielectric Microscopy.

Kohei Yamasue¹, Yasuo Cho¹

¹Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba, Sendai 980-8577, Japan.

Nanomaterials (Basel, Switzerland)

|March 10, 2022

Summary

Scanning nonlinear dielectric microscopy (SNDM) with intermittent contact atomic force microscopy (AFM) now has an improved signal-to-noise ratio using boxcar averaging. This advancement enables clearer imaging of delicate semiconductor materials at the nanoscale.

Keywords:

boxcar averaging scanning microwave impedance microscopy scanning near-field microwave microscopy scanning nonlinear dielectric microscopy scanning probe microscopy

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Area of Science:

Materials Science
Physics
Electrical Engineering

Background:

Scanning nonlinear dielectric microscopy (SNDM) is a near-field microwave microscopy technique used for dielectrics and semiconductors.
It is often combined with atomic force microscopy (AFM) for topography and force regulation.
Intermittent contact AFM with SNDM offers benefits for delicate samples but suffers from lower signal-to-noise (S/N) ratios.

Purpose of the Study:

To enhance the signal-to-noise ratio of SNDM combined with intermittent contact AFM.
To develop a theoretical framework for SNDM's S/N ratio.
To demonstrate the improved imaging capabilities for nanoscale electrical properties.

Main Methods:

Application of boxcar averaging for signal acquisition in SNDM with intermittent contact AFM.
Development of a theoretical model for the S/N ratio in SNDM.
Experimental validation using peak-force tapping AFM and atomically thin van der Waals semiconductors.

Main Results:

Demonstrated significant enhancement of the S/N ratio in SNDM using boxcar averaging with peak-force tapping AFM.
Successfully visualized carrier concentration distribution in few-layer Nb-doped MoS₂, revealing an anomalous electron doping effect.
Confirmed the applicability of the method to other scanning microwave microscopes like scanning microwave impedance microscopy.

Conclusions:

Boxcar averaging effectively improves the S/N ratio for SNDM combined with intermittent contact AFM.
The enhanced technique allows for simultaneous nanoscale topographic, electrical, and mechanical imaging, even on sensitive samples.
This advancement opens new possibilities for characterizing advanced materials and devices.