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Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Design Example: Capacitance Multiplier Circuit01:20

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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
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Voltage Doubler Circuit01:23

Voltage Doubler Circuit

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A voltage doubler circuit integrates two main components: a clamping section and a rectifier section. The clamping section consists of a capacitor (C1) and a diode (D1), whereas the rectifier section is equipped with another diode (D2) and capacitor (C2). This circuit produces an output voltage with twice the amplitude of the sinusoidal input voltage.
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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Energy Stored in a Capacitor01:12

Energy Stored in a Capacitor

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When an archer pulls the string in a bow, he saves the work done in the form of elastic potential energy. When he releases the string, the potential energy is released as kinetic energy of the arrow. A capacitor works on the same principle in which the work done is saved as electric potential energy. The potential energy (UC) could be calculated by measuring the work done (W) to charge the capacitor.
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Energy Stored in a Capacitor: Problem Solving01:26

Energy Stored in a Capacitor: Problem Solving

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In 1749, Benjamin Franklin coined the word battery for a series of capacitors connected to store energy. Capacitors store electric potential energy that can be released over a short time. This property means capacitors have a wide range of applications.
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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
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A Novel Floating High-Voltage Level Shifter with Pre-Storage Technique.

Qiang Li1,2, Yuan Yang1, Haohao Ma1

  • 1Department of Automation and Information Engineering, Xi'an University of Technology, Xi'an 710048, China.

Sensors (Basel, Switzerland)
|March 10, 2022
PubMed
Summary
This summary is machine-generated.

This study introduces a novel floating high-voltage level shifter (FHV-LS) achieving sub-nanosecond propagation delay. The design optimizes speed and stability for high-voltage applications.

Keywords:
HVCMOSfloating high-voltage level shifterlow propagation delaypre-storagepseudosymmetryregulated strength

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Area of Science:

  • Electrical Engineering
  • Semiconductor Devices

Background:

  • High-voltage level shifters (HV-LS) are critical components in power electronics and integrated circuits.
  • Existing HV-LS designs often face challenges with propagation delay and power consumption.

Purpose of the Study:

  • To propose a novel floating high-voltage level shifter (FHV-LS) with enhanced speed and reduced propagation delay deviation.
  • To improve the structural symmetry and stability of the FHV-LS.

Main Methods:

  • Implementation of a pre-storage technique to optimize transmission paths.
  • Introduction of a pull-up network with regulated strength to minimize fall time.
  • Utilizing a pseudosymmetrical input pair for balanced propagation delays.
  • Development of a start-up circuit for reliable VDDH power-up initialization.

Main Results:

  • Achieved sub-nanosecond scale propagation delay.
  • Demonstrated propagation delays of 384 ps and energy per transition of 77.7 pJ at VH = 5 V.
  • Verified performance and stability through 500-point Monte Carlo simulations.

Conclusions:

  • The proposed FHV-LS with pre-storage technique offers significant improvements in speed and delay stability.
  • The design is suitable for high-voltage applications requiring fast and reliable level shifting.