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Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

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Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
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Spin–Spin Coupling: One-Bond Coupling01:17

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Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
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Spin–Spin Coupling: Three-Bond Coupling (Vicinal Coupling)01:22

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1.2K
Vicinal or three-bond coupling is commonly observed between protons attached to adjacent carbons. Here, nuclear spin information is primarily transferred via electron spin interactions between adjacent C‑H bond orbitals. This generally favors the antiparallel arrangement of spins, so 3J values are usually positive.
The extent of coupling depends on the C‑C bond length, the two H‑C‑C angles, any electron-withdrawing substituents, and the dihedral angle between the...
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Edge State Quantum Interference in Twisted Graphitic Interfaces.

Annabelle Oz1, Debopriya Dutta2, Abraham Nitzan1,3

  • 1Department of Physical Chemistry, School of Chemistry, The Raymond and Beverly Sackler Faculty of Exact Sciences and The Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv, 6997801, Israel.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|March 14, 2022
PubMed
Summary
This summary is machine-generated.

Localized electronic states at zigzag edges of graphitic systems influence properties. Room-temperature experiments reveal current oscillations at graphitic interfaces, driven by quantum mechanical interference of edge states.

Keywords:
2D materialsedge statesgraphene interfacesquantum interferencetransport

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Zigzag edges in graphitic systems possess unique localized electronic states.
  • These edge states significantly influence the electronic and transport properties of materials.

Purpose of the Study:

  • To investigate charge transport phenomena at a single graphitic interface.
  • To understand the origin of current oscillations observed with lateral displacement.

Main Methods:

  • Room-temperature charge transport experiments across a graphitic interface.
  • Computational analysis to rationalize observed experimental features.

Main Results:

  • Interlayer current was confined to the contact edges of the graphitic interface.
  • Pronounced current oscillations (up to ≈40 µA) with a dominant period of ≈5 Å were observed.
  • Computational modeling attributed oscillations to quantum mechanical interference of localized edge states.

Conclusions:

  • Quantum mechanical interference of localized edge states dictates transport properties at graphitic interfaces.
  • Observed interference effects are dependent on interface stacking configuration.
  • These phenomena are crucial for understanding low-dimensional graphitic systems.