Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

1.1K
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
1.1K
Field Effect Transistor01:29

Field Effect Transistor

1.8K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.8K
Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
2.7K
Biasing of FET01:22

Biasing of FET

1.0K
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
1.0K
Schottky Barrier Diode01:27

Schottky Barrier Diode

1.3K
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
1.3K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Conformational bifurcation drives dual transport regimes in molecular junctions: Unsupervised machine learning insights.

Smart molecules : open access·2026
Same author

High pressure structural and lattice dynamics study of α-In2Se3.

The Journal of chemical physics·2025
Same author

Mesoscale superlubric Brownian machine based on 2D graphitic interfaces.

Materials horizons·2025
Same author

Direct Determination of Torsion in Twisted Graphite and MoS<sub>2</sub> Interfaces.

Nano letters·2024
Same author

CP-AFM Molecular Tunnel Junctions with Alkyl Backbones Anchored Using Alkynyl and Thiol Groups: Microscopically Different Despite Phenomenological Similarity.

Langmuir : the ACS journal of surfaces and colloids·2024
Same author

Graphene-In<sub>2</sub>Se<sub>3</sub> van der Waals Heterojunction Neuristor for Optical In-Memory Bimodal Operation.

ACS nano·2023

Related Experiment Video

Updated: Apr 25, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K

An optically controlled synaptic device based on a PdSe2/α-In2Se3 vdW heterostructure FET.

Anurag Ghosh1, Inbar Dahan1, Bisweswar Santra1

  • 1Nanoscale Electronic Materials and Devices Laboratory, Faculty of Materials Science and Engineering, Technion - Israel Institute of Technology, Haifa 3200003, Israel. eladk@technion.ac.il.

Materials Horizons
|April 24, 2026
PubMed
Summary
This summary is machine-generated.

This study introduces a novel 2D heterostructure device for optically controlled neuromorphic hardware. It demonstrates versatile synaptic plasticity and high accuracy in artificial neural network applications, paving the way for advanced optoelectronics.

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

9.8K

Related Experiment Videos

Last Updated: Apr 25, 2026

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

9.6K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

10.6K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

9.8K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Neuroscience

Background:

  • Neuromorphic hardware aims to overcome the von Neumann bottleneck using synaptic devices.
  • Achieving bidirectional optical control in these devices is a significant technical hurdle.
  • 2D materials offer unique properties for advanced electronic and optoelectronic applications.

Purpose of the Study:

  • To develop an optically controlled synaptic device with ferroelectric-assisted tunability.
  • To emulate spike-dependent plasticity and achieve bidirectional optical control.
  • To demonstrate the device's potential in logic operations and artificial neural networks.

Main Methods:

  • Fabrication of an all 2D heterostructure field-effect transistor (FET) using few-layer PdSe2 and α-In2Se3.
  • Characterization of excitatory and inhibitory synaptic responses under different wavelengths (406-520 nm and 642-980 nm).
  • Demonstration of logic gate operations and training of a three-layer artificial neural network (ANN) on the MNIST dataset.

Main Results:

  • The device exhibited tunable excitatory and inhibitory synaptic responses controlled by optical and electrical signals.
  • Enhanced retention time of post-synaptic current (PSC), responsivity (R), and detectivity (D) were observed due to the ferroelectric properties of α-In2Se3.
  • High recognition accuracy (96-97%) was achieved in an ANN for handwritten digit recognition using optical inputs.

Conclusions:

  • The developed 2D heterostructure FET is a promising candidate for versatile optically controlled neuromorphic devices.
  • Ferroelectric properties of α-In2Se3 significantly enhance device performance and synaptic plasticity.
  • This work provides a foundation for on-chip optical communication, optoelectronic logic, and Internet of Things (IoT) applications.