Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi₂N₄ van der Waals Heterostructure

Following the successful synthesis of single-layer metallic Janus MoSH and semiconducting MoSi₂N₄, we investigate the electronic and interfacial features of metal/semiconductor MoSH/MoSi₂N₄ van der Waals (vdW) contact. We find that the metal/semiconductor MoSH/MoSi₂N₄ contact forms p-type Schottky contact (p-ShC type) with small Schottky barrier (SB), suggesting that Janus MoSH can be considered as an efficient metallic contact to MoSi₂N₄ semiconductor with high charge injection efficiency. The electronic structure and interfacial features of the MoSH/MoSi₂N₄ vdW heterostructure are tunable under strain and electric fields, which give rise to the SB change and the conversion from p-ShC to n-ShC type and from ShC to Ohmic contact. These findings could provide a new pathway for the design of optoelectronic applications based on metal/semiconductor MoSH/MoSi₂N₄ vdW heterostructures.