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Published on: September 14, 2018
λ/30 inorganic features achieved by multi-photon 3D lithography
Feng Jin1, Jie Liu2, Yuan-Yuan Zhao3
1Laboratory of Organic NanoPhotonics and CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, No. 29, Zhongguancun East Road, Haidian District, Beijing, 100190, P. R. China. jinfeng@mail.ipc.ac.cn.
Femtosecond laser direct writing enables high-resolution, 3D inorganic feature fabrication using hydrogen silsesquioxane. This super-diffraction limit photolithography achieves nanoscale resolution for advanced micro-nano devices.
Area of Science:
- Materials Science
- Nanotechnology
- Photolithography
Background:
- Hydrogen silsesquioxane (HSQ) is an inorganic photoresist suitable for high-resolution patterning.
- Conventional patterning methods using EUV and electron beams face limitations for 3D nanoscale feature fabrication with infrared light.
Purpose of the Study:
- To demonstrate the fabrication of 3D nanoscale inorganic features using femtosecond laser direct writing (FsLDW) of HSQ.
- To achieve super-diffraction limit resolution for HSQ patterning using infrared light.
Main Methods:
- Femtosecond laser direct writing (FsLDW) utilizing a multi-photon absorption process.
- Patterning of hydrogen silsesquioxane (HSQ) with a 780 nm femtosecond laser.
Main Results:
- Achieved a feature size of 26 nm, representing a resolution of λ/30 (super-diffraction limit photolithography).
- Fabricated HSQ microstructures with nanoscale resolution, smooth surfaces, and thermal stability up to 600°C.
- Demonstrated the construction of structural color and Fresnel lenses with desirable optical properties and resistance.
Conclusions:
- FsLDW of HSQ offers a flexible method for creating inorganic features with nanoscale resolution.
- The fabricated microstructures exhibit excellent thermal and chemical resistance.
- This technique holds promise for fabricating advanced micro-nano devices requiring high resolution and material robustness.
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