High-speed silicon microresonator modulators with high optical modulation amplitude (OMA) at input powers >10 mW

Area of Science:

• Photonics
• Integrated Optics
• Semiconductor Devices

Background:

• Compact silicon resonant modulators are crucial for high-speed optical communication.
• Existing modulators face limitations in optical power handling.
• Advancements are needed to extend operational regimes for higher performance.

Purpose of the Study:

• To investigate the performance of a high-speed silicon photonic microdisc modulator.
• To explore its optical power handling capabilities beyond conventional limits.
• To analyze wavelength tuning and biasing strategies for optimal resonant frequency alignment.

Main Methods:

• Utilized a silicon photonic microdisc modulator operating at 1550 nm.
• Experimentally studied wavelength tuning range and biasing paths.
• Measured optical modulation amplitude (OMA) under active modulation with varying on-chip power.
• Employed non-return to zero (NRZ) data modulation at 20 Gbit/s.

Main Results:

• Demonstrated operation with over 10 mW optical power in the bus waveguide.
• Achieved an optical modulation amplitude (OMA) of 4.1 mW.
• Successfully modulated data at 20 Gbit/s non-return to zero (NRZ).
• Characterized the relationship between biasing trajectories and resonant frequency shifts.

Conclusions:

• The silicon photonic microdisc modulator extends the power handling regime for compact resonant modulators.
• The device shows promise for high-speed optical communication systems requiring high optical power.
• Optimized biasing and tuning are critical for achieving high OMA in such devices.