Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOS Capacitor01:25

MOS Capacitor

1.0K
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
1.0K
Types of Semiconductors01:20

Types of Semiconductors

976
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
976
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

552
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
552
MOSFET01:16

MOSFET

615
The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
615
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

354
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
354
Characteristics of MOSFET01:17

Characteristics of MOSFET

529
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
529

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Mechanistic evaluation of amorphous InGaZnO-based one transistor-one capacitor memory cell <i>via</i> fast current-voltage measurements and modeling.

Nanoscale·2026
Same author

Reconfigurable 2D Floating-Gate Field-Effect Transistors with Graphene-Induced Interfacial Polarization for Unified Memory-Logic Integration.

ACS nano·2026
Same author

Heterogeneous Local-Epitaxial Growth Behavior of Ultrathin HfO<sub>2</sub>/Al-Doped TiO<sub>2</sub> Bilayer Dielectrics for Dynamic Random-Access Memory Capacitor Applications.

ACS applied materials & interfaces·2026
Same author

Non-Arrhenius threshold switching by field-driven dipolar ordering.

Nature communications·2026
Same author

Advancing forward osmosis predictions: A deep learning-based surrogate modeling approach.

Journal of the science of food and agriculture·2026
Same author

Adaptive spatial hashing with dual-domain memristive hardware.

Nature communications·2026

Related Experiment Video

Updated: Sep 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K

Review of Semiconductor Flash Memory Devices for Material and Process Issues.

Seung Soo Kim1,2, Soo Kyeom Yong1,2, Whayoung Kim1,3

  • 1Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, Seoul National University, Seoul, 08826, Republic of Korea.

Advanced Materials (Deerfield Beach, Fla.)
|March 19, 2022
PubMed
Summary

Vertically integrated NAND (V-NAND) flash memory faces challenges with layer stacking. Future storage may utilize ionic mechanisms to overcome flash memory limitations.

Keywords:
NAND architecturecharge-trapping memorylayer stackingmaterial and process issuesmultilevel data

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

9.4K

Related Experiment Videos

Last Updated: Sep 29, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
09:49

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

4.2K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

14.9K
In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM
10:42

In Depth Analyses of LEDs by a Combination of X-ray Computed Tomography CT and Light Microscopy LM Correlated with Scanning Electron Microscopy SEM

Published on: June 16, 2016

9.4K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Vertically integrated NAND (V-NAND) flash memory is crucial for modern electronics and data centers.
  • Conventional scaling is reaching limits, shifting focus to layer stacking for increased density.
  • Current 176-layer V-NAND faces challenges like film stress and deep etching, with a predicted stacking limit.

Purpose of the Study:

  • To review the current status and challenges of charge-trap-based flash memory.
  • To analyze V-NAND technology concerning materials, architecture, integration, and programming.
  • To explore future directions for storage devices beyond current flash memory limitations.

Main Methods:

  • Review of existing literature on V-NAND and charge-trap flash memory.
  • Analysis of material choices (floating-gate vs. charge-trap-layer).
  • Comparison of array-level circuit architectures (NOR vs. NAND) and integration structures (2D vs. 3D).
  • Evaluation of cell-level programming techniques (single vs. multiple levels).

Main Results:

  • V-NAND density increases via layer stacking, but faces fabrication and physical limits.
  • Charge-trap flash memory offers alternatives to floating-gate technology.
  • New materials and fabrication processes are being explored to enhance performance.
  • Ionic mechanisms are proposed as a potential solution for future storage devices.

Conclusions:

  • Layer stacking in V-NAND has inherent physical limitations, necessitating new approaches.
  • Charge-trap flash memory and novel materials are key areas for current development.
  • Ionic mechanisms present a promising pathway to overcome fundamental flash memory challenges and enable next-generation storage.