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Two-Dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors.

Shayan Parhizkar1,2, Maximilian Prechtl3, Anna Lena Giesecke2

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Platinum diselenide (PtSe2) photodetectors offer a low-cost solution for silicon photonics. These integrated devices show excellent infrared performance, paving the way for advanced photonic-integrated circuits.

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Area of Science:

  • Materials Science
  • Optoelectronics
  • Nanotechnology

Background:

  • Photodetectors (PDs) are crucial components in photonic-integrated circuits (PICs).
  • Current PDs for silicon photonics face limitations, particularly for infrared wavelengths.
  • Low-cost, easily integrable PDs are needed to advance PIC technology.

Purpose of the Study:

  • To develop low-cost, easily integrable photodetectors for silicon photonics.
  • To explore the potential of platinum diselenide (PtSe2) for infrared PD applications.
  • To demonstrate PtSe2-based PDs fabricated by direct conformal growth on silicon waveguides.

Main Methods:

  • Synthesized multilayered platinum diselenide (PtSe2) at temperatures below 450 °C.
  • Integrated PtSe2-based PDs directly onto silicon waveguides via conformal growth.
  • Characterized PD performance at 1550 nm wavelength and utilized Fourier-transform infrared (FTIR) spectroscopy for extended wavelength analysis.

Main Results:

  • Achieved PtSe2 photodetectors operating at 1550 nm with a responsivity of 11 mA/W and response times under 8.4 μs.
  • FTIR spectroscopy confirmed PtSe2's suitability for photodetectors across a broad infrared spectrum (1.25–28 μm).
  • Directly grown PtSe2 PDs demonstrated superior performance compared to those fabricated using standard 2D layer transfer methods.

Conclusions:

  • Platinum diselenide (PtSe2) is a promising 2D material for optoelectronics and PICs due to its infrared responsivity, chemical stability, and low-temperature growth.
  • Direct integration of PtSe2 by conformal growth offers an advantageous fabrication route for high-performance silicon photonic devices.
  • PtSe2-based photodetectors represent a significant advancement for cost-effective and versatile silicon photonics, particularly for infrared applications.