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Si-Doped HfO2-Based Ferroelectric Tunnel Junctions with a Composite Energy Barrier for Non-Volatile Memory

Yoseop Lee1, Sungmun Song1, Woori Ham1

  • 1Department of Nano & Semiconductor Engineering, Korea Polytechnic University, Siheung 15073, Korea.

Materials (Basel, Switzerland)
|March 25, 2022
PubMed

Keywords:
FTJferroelectricnon-volatile memory

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