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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
Ultrahigh mechanical flexibility induced superior piezoelectricity of InSeBr-type 2D Janus materials
Xiaobo Shi1,2, Shujuan Jiang1,3, Xianwei Han1
1Institute for Computational Materials Science, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China. xianweihan@henu.edu.cn.
Abstract:
InSeBr-Type monolayers, ternary In(Se,S)(Br,Cl) compounds, are typical two-dimensional (2D) Janus materials and can be exfoliated from their bulk crystals. The structural stability, electronic properties, mechanical flexibility, and intrinsic piezoelectricity of these InSeBr-type 2D Janus monolayers are comprehensively investigated by first-principles calculations. Our calculations show that the stable InSeBr-type monolayers exhibit ultrahigh mechanical flexibility with low Young's moduli. Due to the amazing flexibility of the InSeBr monolayer with an ultra-low Young's modulus of 0.81 N m-1, the piezoelectric strain coefficient d11 can reach 103 pm V-1 orders of magnitude (around 2361-3224 pm V-1), which is larger than those of reported 2D materials and even superior to those of conventional perovskite bulk materials. Such a superior piezoelectric response of InSeBr-type monolayers could facilitate their practical applications in sensors and energy harvesters.

