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Updated: Sep 28, 2025

Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Current-induced Néel order switching facilitated by magnetic phase transition
Hao Wu1,2, Hantao Zhang3, Baomin Wang4,5
1Department of Electrical and Computer Engineering, University of California, Los Angeles, CA, 90095, USA. wuhaoiphy@gmail.com.
Researchers achieved low-current electrical writing of antiferromagnetic (AFM) orders in FeRh by inducing a transient ferromagnetic state. This breakthrough enables efficient manipulation for next-generation AFM memory devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Antiferromagnetic (AFM) materials offer high storage density and speed for next-gen magnetic memory.
- Energy-efficient manipulation of AFM orders is challenging due to large exchange energy barriers.
Purpose of the Study:
- To demonstrate energy-efficient electrical writing of antiferromagnetic orders.
- To explore AFM-FM phase transitions for manipulating AFM states.
Main Methods:
- Utilized current-induced Joule heating to induce a transient ferromagnetic (FM) state in FeRh.
- Employed spin-orbit torque to switch the AFM order parameter by 90°.
- Verified switching using X-ray magnetic linear dichroism (XMLD) and electrical transport measurements.
Main Results:
- Achieved electrical writing of AFM orders at a record-low current density of ~10^6 A cm^-2.
- Demonstrated switching of AFM order parameter by 90° via transient FM state.
- Confirmed AFM switching mechanism through temperature and magnetic bias field dependent measurements.
Conclusions:
- Developed a novel method for low-current density writing in AFM systems.
- The AFM-FM phase transition in FeRh facilitates efficient manipulation of AFM orders.
- Opens new pathways for practical applications in pure antiferromagnetic memory devices.
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