Sparse CNT networks with implanted AgAu nanoparticles: A novel memristor with short-term memory bordering between...

Area of Science:

• Materials Science
• Nanotechnology
• Neuroscience

Background:

• Memristors are crucial for next-generation computing, particularly neuromorphic circuits.
• Existing memristors often lack the nuanced switching behaviors needed for biological plausibility.
• Short-term memory functionalities are essential for advanced artificial intelligence.

Purpose of the Study:

• To introduce a novel lateral memristor with hybrid resistive switching.
• To demonstrate biologically plausible short-term memory capabilities.
• To present a scalable fabrication method for nano-scaled devices.

Main Methods:

• Fabrication of a lateral memristor using a sparse network of carbon nanotubes (CNTs).
• Deposition of silver-gold (AgAu) nanoparticles into nanogaps via gas aggregation.
• Characterization of resistive switching behavior, including bipolar and diffusive modes.

Main Results:

• The memristor exhibits a hybrid switching behavior, combining bipolar and decelerated diffusive switching.
• A retention time in the second- to sub-minute scale was observed, mimicking short-term memory.
• Retention time showed a positive correlation with the duration of the Set voltage pulse.

Conclusions:

• The novel lateral memristor demonstrates potential for short-term memory in neuromorphic circuits.
• The fabrication method is scalable and opens avenues for sensor integration.
• Low-voltage operation and hybrid switching offer advantages for future electronic devices.