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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Song Li1, Anton Pershin1, Gergő Thiering1
1Wigner Research Centre for Physics, P.O. Box 49, H-1525 Budapest, Hungary.
Carbon defects in hexagonal boron nitride (hBN) are key to ultraviolet (UV) quantum emitters. First-principles calculations identify a specific carbon ring defect (6C) matching experimental UV emission signals.
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