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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
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Nanoscale flexible organic thin-film transistors
Ute Zschieschang1, Ulrike Waizmann1, Jürgen Weis1
1Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Science Advances
|April 1, 2022
Summary
Direct-write electron-beam lithography enabled fabrication of nanoscale organic transistors with record high on/off ratios. These low-voltage organic thin-film transistors achieve high performance on various substrates.
Area of Science:
- Materials Science
- Organic Electronics
- Nanotechnology
Background:
- Organic thin-film transistors (OTFTs) are crucial for flexible electronics.
- Achieving high performance in nanoscale OTFTs remains a challenge.
Purpose of the Study:
- To fabricate nanoscale p-channel and n-channel organic thin-film transistors using direct-write electron-beam lithography.
- To evaluate the electrical performance and dynamic characteristics of these transistors.
Main Methods:
- Direct-write electron-beam lithography for device fabrication.
- Fabrication on glass and flexible polymeric substrates.
- Characterization of p-channel and n-channel transistors and inverters.
Main Results:
- Fabricated transistors with channel lengths of 200 nm and gate-to-contact overlaps of 100 nm.
- Achieved on/off current ratios up to 4 × 10^9 for p-channel and 10^8 for n-channel transistors.
- Demonstrated voltage-normalized frequency of ~6 MHz/V for inverters at 1-2 V supply.
Conclusions:
- Direct-write electron-beam lithography is a viable method for high-performance nanoscale organic transistors.
- The fabricated transistors exhibit record on/off ratios and high dynamic performance.
- These results pave the way for advanced flexible organic electronic devices.
