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High-performance hysteresis-free perovskite transistors through anion engineering
Huihui Zhu1, Ao Liu1, Kyu In Shim2
1Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea.
Nature Communications
|April 2, 2022
Summary
High-performance perovskite thin-film transistors (TFTs) achieve hysteresis-free operation by engineering halide anions in methylammonium tin iodide (MASnI3). This breakthrough suppresses defects, enabling stable, high-mobility p-channel TFTs for advanced electronics.
Area of Science:
- Materials Science
- Solid-State Physics
- Device Engineering
Background:
- Metal halide perovskites show promise for optoelectronics but face challenges in transistor applications due to ion migration and organic spacer limitations.
- Developing high-performance perovskite-based transistors requires overcoming issues like hysteresis and ensuring operational stability.
Purpose of the Study:
- To develop high-performance, hysteresis-free p-channel perovskite thin-film transistors (TFTs) using methylammonium tin iodide (MASnI3).
- To investigate the impact of halide anion engineering on film quality, defect suppression, and device performance.
- To elucidate the primary cause of hysteresis in tin-based perovskite TFTs.
Main Methods:
- Fabrication of p-channel TFTs using methylammonium tin iodide (MASnI3) channels.
- Systematic halide (I/Br/Cl) anion engineering to optimize film quality and suppress vacancies.
- Characterization of device performance, including mobility, on/off ratio, threshold voltage, stability, and reproducibility.
- Investigation of hysteresis mechanisms through experimental analysis.
Main Results:
- Achieved high hole mobilities of 20 cm²/V·s and current on/off ratios exceeding 10⁷.
- Demonstrated hysteresis-free operation with threshold voltages of 0 V.
- Showcased high operational stabilities and reproducibilities.
- Identified minority carrier trapping, not ion migration, as the main cause of hysteresis in Sn-based perovskite TFTs.
- Successfully integrated perovskite TFTs with n-channel IGZO TFTs to create high-gain complementary inverters.
Conclusions:
- Rational halide anion engineering in MASnI3 enables high-performance, stable, and hysteresis-free p-channel perovskite TFTs.
- Minority carrier trapping is the dominant factor causing hysteresis in these devices.
- The developed perovskite TFTs are suitable for integration into complex circuits, paving the way for printable electronics.
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