Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devices

Metal halide perovskites (MHPs) have been studied intensely as the active material for optoelectronic devices. Lithography methods for perovskites remain limited because of the solubility of perovskites in polar solvents. Here, we demonstrate an electron-beam-lithography process with a poly(methyl methacrylate) resist based on the nonpolar solvents o-xylene, hexane, and toluene. Features down to 50 nm size are created, and photoluminescence of CsPbBr₃ nanowires exhibits no degradation. We fabricate metal contacts to single CsPbBr₃ nanowires, which show a strong photoresponsivity of 0.29 A W^-1. The presented method is an excellent tool for nanoscale MHP science and technology, allowing for the fabrication of complex nanostructures.