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Updated: Sep 27, 2025

Development of Efficient OLEDs from Solution Deposition
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Solution-processed AIEgen NIR OLEDs with EQE Approaching 15 .

Ying Yu1,2,3,4, Hao Xing4, Dan Liu1,2,3

  • 1School of Science and Engineering, Shenzhen Institute of Aggregate Science and Technology, The Chinese University of Hong Kong, Shenzhen, Guangdong, 518172, China.

Angewandte Chemie (International Ed. in English)
|April 8, 2022
PubMed
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Researchers developed new organic near-infrared (NIR) emitters with aggregation-induced emission (AIE) properties. These highly efficient NIR luminogens show promise for applications in bioimaging and organic light-emitting diodes (OLEDs).

Area of Science:

  • Materials Science
  • Organic Electronics
  • Photophysics

Background:

  • Organic near-infrared (NIR) luminogens are crucial for bioimaging, OLEDs, and telecommunication.
  • High solid-state quantum efficiencies in organic NIR emitters remain a significant challenge.

Purpose of the Study:

  • To design and synthesize novel electron-deficient acceptors for efficient NIR emitters.
  • To investigate the aggregation-induced emission (AIE) properties of these new materials.
  • To evaluate their performance in organic light-emitting diodes (OLEDs).

Main Methods:

  • Synthesis of a novel electron-deficient acceptor (BSM) based on dithiafulvalene and benzothiadiazole.
  • Fabrication and characterization of organic light-emitting diodes (OLEDs) using the synthesized AIEgens.
Keywords:
Aggregation Induced EmissionNear InfraredOrganic Light Emitting DiodeSolution ProcessThermally Activated Delayed Fluorescence

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  • Photophysical measurements including solid quantum yield and electroluminescence spectra.

    • Main Results:

    • AIEgens based on BSM exhibited NIR emission.
    • TBSMCN demonstrated a solid quantum yield of 10.7% at 820 nm.
    • Solution-processed OLEDs achieved external quantum efficiencies (EQEs) up to 9.4% (728 nm) and 2.2% (804 nm) in non-doped devices.
    • Optimized devices with a sensitizer reached an EQE of 14.3% at 750 nm.

    Conclusions:

    • The developed BSM acceptor facilitates the creation of highly efficient AIE-based NIR emitters.
    • These materials show significant potential for advanced applications in optoelectronics and bioimaging.
    • The strategy of incorporating a strong acceptor with AIE properties opens new avenues for NIR organic electronics.