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Related Concept Videos

Schottky Barrier Diode01:27

Schottky Barrier Diode

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Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
535
Field Effect Transistor01:29

Field Effect Transistor

617
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
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Biasing of FET01:22

Biasing of FET

380
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
380
Characteristics of MOSFET01:17

Characteristics of MOSFET

526
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
526
MOSFET01:16

MOSFET

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

547
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
547

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Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration.

Shujuan Mao1, Jianfeng Gao1, Xiaobin He1

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Nanomaterials (Basel, Switzerland)
|April 12, 2022
PubMed
Summary
This summary is machine-generated.

Low-temperature Schottky source/drain (S/D) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are developed for 3D integration. These devices demonstrate competitive performance, enabling advanced 3D integrated circuits with reduced thermal budgets.

Keywords:
3D sequential integrationSchottky S/D FinFETsinverterlow thermal budget

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • 3D sequential integration demands advanced semiconductor devices compatible with low thermal budgets.
  • Conventional high-temperature fabrication processes limit integration density and material choices.
  • Schottky source/drain (S/D) architectures offer potential for low-temperature processing.

Purpose of the Study:

  • To investigate low-temperature Schottky S/D MOSFETs for 3D sequential integration.
  • To demonstrate the feasibility of fabricating complementary Schottky S/D FinFETs at temperatures below 500 °C.
  • To evaluate the electrical performance and potential of these devices in integrated circuits.

Main Methods:

  • Fabrication of complementary Schottky S/D FinFETs using a maximum processing temperature of 500 °C.
  • Source/drain extension (SDE) engineering to optimize device characteristics.
  • Characterization of device performance, including ON-state current (ION) and ION/IOFF ratio.
  • Evaluation of CMOS inverter and ring oscillator (RO) functionality.

Main Results:

  • Successful fabrication of complementary Schottky S/D FinFETs at 500 °C.
  • Schottky S/D PMOS achieved ION of 76.07 μA/μm and ION/IOFF of 7 × 10^5.
  • Schottky S/D NMOS achieved ION of 48.57 μA/μm and ION/IOFF of 1 × 10^6.
  • CMOS inverter demonstrated voltage gain of 18V/V and low power consumption (<0.9 μW at 0.8 V).
  • Full functionality of CMOS ring oscillators confirmed.

Conclusions:

  • Low-temperature Schottky S/D MOSFETs are viable top-tier devices for 3D sequential integration.
  • SDE engineering enables competitive driving and switching properties compared to high-temperature devices.
  • The developed devices and circuits show promise for advanced, thermally constrained integrated systems.