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Low-Temperature (≤500 °C) Complementary Schottky Source/Drain FinFETs for 3D Sequential Integration

Shujuan Mao1, Jianfeng Gao1, Xiaobin He1

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Nanomaterials (Basel, Switzerland)
|April 12, 2022
PubMed

Keywords:
3D sequential integrationSchottky S/D FinFETsinverterlow thermal budget

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