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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

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Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution.

Yuki Sugama¹, Yoshiaki Watanabe¹, Rihito Kuroda^1,2

¹Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, Japan.

Sensors (Basel, Switzerland)

|April 12, 2022

Summary

Two new CMOS proximity capacitance image sensors achieve ultra-high precision detection (<10 zF at 300V) and a 123 dB dynamic range. These advanced sensors offer improved spatial resolution for capacitance imaging applications.

Keywords:

CMOS high precision high resolution image sensor large format proximity capacitance

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Area of Science:

Electrical Engineering
Sensor Technology
Microelectronics

Background:

Capacitance imaging sensors are crucial for various applications requiring high sensitivity and spatial resolution.
Existing sensors face limitations in precision, dynamic range, and resolution.

Purpose of the Study:

To develop and present two novel high-precision CMOS proximity capacitance image sensors.
To evaluate their capacitance detection precision, dynamic range, and spatial resolution.

Main Methods:

Fabrication of two CMOS chips: Chip A (12 μm pitch, 1.68 cm² area) and Chip B (2.8 μm pitch, 1.8 M pixels).
Implementation of a noise-canceling technique for enhanced capacitance detection.
Utilizing multiple input pulse amplitudes to achieve a wide dynamic range.
Experimental verification of spatial resolution using modulation transfer function (MTF) analysis.

Main Results:

Achieved capacitance detection precision below 100 zF at 20V and below 10 zF at 300V.
Demonstrated a capacitance detection dynamic range of up to 123 dB.
Confirmed spatial resolution improvements for Chip B through MTF measurements with various line and space patterns.
Successfully demonstrated capacitance imaging using the fabricated chips.

Conclusions:

The newly developed CMOS proximity capacitance image sensors exhibit exceptional precision and dynamic range.
These sensors represent a significant advancement in capacitance imaging technology, offering higher resolution and sensitivity.
The demonstrated capabilities pave the way for enhanced applications in fields requiring precise capacitance measurements.