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Direct-Contact Prelithiation of Si-C Anode Study as a Function of Time, Pressure, Temperature, and the Cell Ideal
Manoj Gautam1, Govind Kumar Mishra1, Aakash Ahuja1
1Electrochemical Energy Storage Laboratory, Department of Energy Science and Engineering, Indian Institute of Technology Bombay, Powai, Mumbai 400076, India.
Abstract:
Direct-contact prelithiation (PL) is a facile, practical, and scalable method to overcome the first-cycle loss and large volume expansion issues for silicon anode (with 30 wt % Si loading) material, and a detailed study is absent. Here, an understanding of direct-contact PL as a function of the PL time, and the effects of externally applied pressure (weight), microstructure, and operating temperature have been studied. The impact of PL on the Si-C electrode surfaces has been analyzed by electrochemical techniques and different microstructural analyses. The solid electrolyte interface (SEI) layer thickness increases with the increase in PL time and decreases after 2 min of PL time. The ideal PL time was found to be between 15 (PL-15) and 30 (PL-30) min with 83.5 and 97.3% initial Coulombic efficiency (ICE), respectively, for 20 g of externally applied weight. The PL-15 and PL-30 cells showed better cyclic stability than PL-0 (without prelithiation), with more than 90% capacity retention after 500 cycles at 1 A g-1 current density. The discharge capacities for PL-15 and PL-30 have been observed as highest at 45 °C operating temperature with limited cyclability. We propose here a synchronization strategy in prelithiation time, pressure, and temperature to achieve excellent cell performance.
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