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Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Promotion in solid phase reaction of Pt/SiO bilayer film by electron-orbital-selective-excitation
H Yasuda1,2, K Sato1,2, S Ichikawa1,2
1Research Center for Ultra-High Voltage Electron Microscopy, Osaka University Ibaraki Osaka 567-0047 Japan yasuda@uhvem.osaka-u.ac.jp.
Abstract:
A thermally impossible positive free energy reaction can proceed by electron-orbital-selective excitation. When the Si 2p core level is photo-excited in Pt/SiO bilayer films, Coulomb repulsion at the final two-hole state localized in the valence band by an interatomic Auger transition induces dissociation of the O atom and formation of a Si-Pt bond. Consequently, Pt2Si silicide is formed by a positive free energy reaction. Under a single particle excitation of the valence band, low probability of the coexistence of the two-hole state for picosecond order suppresses to allow the reaction to proceed.
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