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Updated: Sep 27, 2025
Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Chemical vapor deposition and temperature-dependent Raman characterization of two-dimensional vanadium ditelluride
Mongur Hossain1,2,3, Muhammad Ahsan Iqbal2,3, Juanxia Wu2
1Hunan Key Laboratory of Two-Dimensional Materials, State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University Changsha 410082 P. R. China hossain@hnu.edu.cn.
Abstract:
Recently, ultrathin two-dimensional (2D) metallic vanadium dichalcogenides have attracted widespread attention because of the charge density wave (CDW) phase transition and possible ferromagnetism. Herein, we report the synthesis and temperature-dependent Raman characterization of the 2D vanadium ditelluride (VTe2). The synthesis is done by atmospheric pressure chemical vapor deposition (APCVD) using vanadium chloride (VCl3) precursor on fluorphlogopite mica, sapphire, and h-BN substrates. A large area of the thin film with thickness ∼10 nm is grown on the hexagonal boron nitride (h-BN) substrate. Temperature-dependent Raman characterization of VTe2 is conducted from room temperature to 513 K. Remarkable changes of Raman modes at around 413 K are observed, indicating the structural phase transition.
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