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Updated: Sep 26, 2025
05:39
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
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On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity
Jiawei Huang1,2, Xu Duan2,3, Sunam Jeon4
1Zhejiang University, Hangzhou, Zhejiang 310058, P. R. China.
Materials Horizons
|April 19, 2022
Summary
We introduce type-II 2D ferroelectric topological insulators (2DFETIs), novel quantum materials offering non-volatile switching of quantum spin Hall states. This breakthrough enables on-demand control over topological phase transitions for advanced quantum electronics.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Computing
Background:
- Topological insulators protect surface states against scattering.
- Ferroelectric materials exhibit spontaneous electric polarization.
- Quantum spin Hall (QSH) states are a topological phase with spin-momentum locked edge states.
Purpose of the Study:
- To propose a new class of quantum materials: type-II 2D ferroelectric topological insulators (2DFETIs).
- To develop a general strategy for realizing 2DFETIs using trivial 2D ferroelectrics.
- To demonstrate on-demand control of topological phase transitions and propose novel quantum electronic devices.
Main Methods:
- Utilizing first-principles calculations with hybrid density functionals.
- Designing bilayer heterostructures of 2D ferroelectrics.
- Investigating the interplay between ferroelectric polarization and band topology.
Main Results:
- Demonstrated a series of bilayer heterostructures as type-II 2DFETIs.
- Established a direct coupling between band topology and polarization state.
- Showcased robust control over band gap and band inversion strength via built-in electric fields.
Conclusions:
- Type-II 2DFETIs offer a pathway to non-volatile, switchable quantum spin Hall states.
- The proposed strategy enables the realization of 2DFETIs from topologically trivial materials.
- 2DFETI-based devices like domain-wall quantum circuits and topological memristors are feasible.
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