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Charge-Trapping-Induced Hysteresis Effects in Highly Doped Silicon Metal-Oxide-Semiconductor Structures

Piotr Wiśniewski1,2, Bogdan Majkusiak3

  • 1Centre for Advanced Materials and Technologies CEZAMAT, Warsaw University of Technology, 02-822 Warsaw, Poland.

Materials (Basel, Switzerland)
|April 23, 2022
PubMed

Keywords:
hysteresismetal-insulator-semiconductorsemiconductor devicestrapstunneling spectroscopy

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