Greatly improved photoresponse in the MAPbBr₃/Si heterojunction by introducing an ITO layer and optimizing MAPbBr₃...

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Perovskite/silicon heterojunctions are promising for photodetector applications.
• Optimizing material interfaces and layer thicknesses is crucial for device performance.

Purpose of the Study:

• To develop a high-performance CH3NH3PbBr3/Si heterojunction photodetector.
• To investigate the impact of an ITO conductive layer and MAPbBr3 thickness on device characteristics.

Main Methods:

• Fabrication of CH3NH3PbBr3/Si heterojunction photodetectors.
• Introduction of an Indium Tin Oxide (ITO) conductive layer.
• Modulation of the MAPbBr3 layer thickness.

Main Results:

• The MAPbBr3/Si photodetector showed ultra-broadband photoresponse (405-1064 nm).
• Incorporating an ITO layer significantly boosted responsivity (R) and detectivity (D).
• Optimizing MAPbBr3 thickness to ~215 nm yielded the best R (~0.87 A/W) and D (~1.92x10^11 Jones).

Conclusions:

• The proposed method effectively enhances photodetector performance.
• ITO layer and MAPbBr3 thickness are critical parameters for optimizing device characteristics.
• The developed photodetector shows potential for advanced optoelectronic applications.