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Optical and geometric parameter extraction for photonic integrated circuits.

Todd H Stievater, Nathan F Tyndall, Marcel W Pruessner

    Optics Express
    |April 27, 2022
    PubMed
    Summary
    This summary is machine-generated.

    This study introduces an in-situ technique for precise characterization of photonic integrated circuits, measuring material refractive indices and waveguide geometry. The method accurately determines critical parameters for foundry fabrication and process quality control.

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    Area of Science:

    • Photonics and Optical Engineering
    • Materials Science
    • Integrated Circuit Fabrication

    Background:

    • Photonic integrated circuits (PICs) are crucial for advanced optical technologies.
    • Accurate characterization of material refractive indices and waveguide geometry is essential for PIC fabrication.
    • Existing characterization methods may be external or less comprehensive for foundry processes.

    Purpose of the Study:

    • To develop and validate an in-situ technique for simultaneous characterization of PIC material properties and geometry.
    • To enable accurate measurement of refractive indices and waveguide dimensions across a wide optical bandwidth.
    • To support technological maturation and quality control in PIC foundry fabrication.

    Main Methods:

    • Integration of white light spectroscopy with unbalanced Mach-Zehnder interferometers.
    • In-situ measurement of core thickness, core width, core refractive index, and cladding refractive index.
    • Validation using standard photonic wafer layers without external techniques like ellipsometry or microscopy.

    Main Results:

    • Simultaneous and accurate extraction of waveguide geometry (thickness, width) and material refractive indices (core, cladding).
    • High precision achieved: refractive indices with 1-σ error of 0.1%-0.5%, geometric parameters with 3 nm-7 nm error.
    • Demonstrated applicability within standard photonic wafer fabrication workflows.

    Conclusions:

    • The developed in-situ technique provides a robust method for characterizing PICs.
    • This capability is vital for predicting component yield and ensuring process quality control in foundry settings.
    • The technique offers a significant advancement for the technological maturation of photonic integrated circuits.